Towards controlled Doping in III-V Semiconductor Nanowires

Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.

Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is enti...

Controlled nanoscale doping of semiconductors via molecular monolayers.

One of the major challenges towards scaling electronic devices to the nanometre-size regime is attaining controlled doping of semiconductor materials with atomic accuracy, as at such small scales, the various existing technologies suffer from a number of setbacks. Here, we present a novel strategy for controlled, nanoscale doping of semiconductor materials by taking advantage of the crystalline...

Doping of Vapor–Liquid–Solid Grown Gallium Arsenide Nanowires

ii Abstract (in Finnish) iiiin Finnish) iii

Review on photonic properties of nanowires for photovoltaics.

III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high refractive index. The antennae like behavior modifies the absorption and emission properties of nanowires compared to planar materials. Nanowires absorb light more efficiently compared to an equivalent volume planar material, leading to higher short circuit current densities. The modified emissio...

Te-doping of self-catalyzed GaAs nanowires